MRF100 Series

MRF164W Motorola Power Field Effect Transistor 28 Volt (NOS)

In Stock

Designed primarily for wideband large-scale output and driver stages to 500MHz.

• Guaranteed Performance at 400 MHZ, 28 Vdc


• Output Power: 20 W


• Minimum Gain: 15dB


• Push-Pull Configuration Reduces Even Bumbered Harmonics


• Excellent Thermal Stability, suited for Class A Operation


• Allows Manual Gain Control, ALC and Modulation Techniques


• 30:1 VSWR

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF164W

MRF156 Motorola Transistor (NOS)

In Stock

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF156

MRF153 Motorola Transistor (NOS)

In Stock

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF153

MRF151G Motorola MOSFET RF Power Transistor 300W 50V 175 MHz (NOS)

In Stock

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF151G-MOT

MRF15030 Motorola RF Power Transistor 30W 1490 MHz 26V (NOS)

In Stock

New Old Stock * No longer available for export
MFR: Motorola 
SKU: MRF15030

Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz.  Specified 26 V 1490 MHz.

Class AB Characteristics: Output Power, 30 W Gain, 9 dB Min @ 30 Watts (PEP) Efficiency, 30% Min @ 30 Watts (PEP) Intermodulation Distortion.  30 dBc Max @ 30 Watts (PEP)

MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz

In Stock

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

• Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`


• 100% ruggedness tested at rated output power


• Low thermal resistance


• Low Crss — 20 pF typ @ VDS = 28 V

MRF: M/A-COM
SKU: MRF175GU-MA

MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz

In Stock

Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET

• Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)


• Excellent thermal stability, ideally suited for Class A operation


• Facilitates manual gain control, ALC and modulation techniques


• 100% tested for load mismatch at all phase angles with 30:1 VSWR


• Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz

MFR: M/A-COM
SKU: MRF174-MA

MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

In Stock

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles

Applications

• Aerospace and Defense


• ISM 

MFR: M/A-COM
SKU: MRF150-MA-MQ

MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

In Stock

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles

Applications

• Aerospace and Defense


• ISM 

MFR: M/A-COM
SKU:MRF150-MA-MP

MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

In Stock

• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles

Applications

• Aerospace and Defense


• ISM 

SKU: MRF150-MA