MRF100 Series

MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

In Stock

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high  gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency  band solid state transmitters and amplifiers.

• Guaranteed performance at 30 MHz, 28V:  Output power: 150W  Gain: 8dB (22dB Typ.)  Efficiency: 40%


• Typical Performance at 175MHz, 50V:  Output Power: 150 W  Gain: 13 dB


• Low thermal resistance


• Ruggedness tested at rated output power


• Nitride passivated die for enhanced reliability

New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF141-MA

MRF141G M/A-COM RF Power FET 300W 175MHz 28V

In Stock

• Ruggedness tested at rated output power


• Nitride passivated die for enhanced reliability


• Operating Frequency: 175 MHz


• Gain: 12 Db


• Output Power: 300 W

MFR: MA/COM
SKU: MRF141G-MA

MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

In Stock

Made with original Motorola Die

Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

• Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)


• Superior high order IMD


• MD(d3) (150 W PEP): –30 dB (Typ.)


• IMD(d11) (150 W PEP): –60 dB (Typ.)


• 100% tested for load mismatch at all phase angles with 30:1 VSWR

MFR: M/A-COM
SKU: MRF140-MP-MA

MRF140 M/A-COM Transistor 150W 28V 150 MHz

In Stock

Made with original Motorola Die

Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

• Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)


• Superior high order IMD


• MD(d3) (150 W PEP): –30 dB (Typ.)


• IMD(d11) (150 W PEP): –60 dB (Typ.)


• 100% tested for load mismatch at all phase angles with 30:1 VSWR

MFR: M/A-COM
SKU: MRF140-MA

MRF137 M/A-COM Transistor 30W 28V 400 MHz

In Stock

Designed for wideband large signal output and drive stages Product Image  up to 400 MHz range.  N–Channel enhancement mode

• Guaranteed 28 V, 150 MHz performance  Output power = 30 W  Minimum gain = 13 dB  Efficiency — 60% (Typical)
• Small– and large–signal characterization
• Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques

Limit, 10 per customer.

MFR: M/A-COM

MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz

In Stock

Made with original Motorola Die

Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode

MFR: M/A-COM
SKU: MRF136Y-MA

MRF136 M/A-COM Transistor 15 watt 28v 400 MHz

In Stock

Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in single-ended configuration  N–Channel enhancement mode
.
• Guaranteed 28 volt, 150 MHz performance  Output power = 15 watts  Narrowband gain = 16 dB (Typ.)  Efficiency = 60% (Typ.)
• Small– and large–signal characterization
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Excellent thermal stability, ideally suited for Cass A operation
• Facilitates manual gain control, ALC and modulation techniques

MFR: M/A-COM
SKU: MRF136-MA

MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz

In Stock

Made with original Motorola Die

Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

• Guaranteed performance at 400 MHz, 28 Vdc


• Output power = 10 W


• Power gain = 12 dB min.


• Efficiency = 50% min.


• 100% tested for load mismatch at all phase angles with 30:1 VSWR


• Gold metallization system for high reliability


• Computer–controlled wirebonding gives consistent input Impedance

MRF: M/A-COM
SKU: MRF134-MA

MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

In Stock

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles

Applications

• Aerospace and Defense


• ISM 

MFR: M/A-COM
SKU: MRF150-MA-MQ

MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

In Stock

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

• Enhanced thermal performance
• Higher power dissipation  Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%  Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability

MFR: M/A-COM
SKU: MRF151A-MA