Transistors - RF, Mosfets, Misc.
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4N25 Toshiba 6 Pin Dip Optoisolaters Transistor (NOS)
In Stock
The 4N25 device consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
- Most Economical Optoisolator Choice for Medium Speed, Switching Applications
- Meets or Exceeds All JEDEC Registered Specifications
New Old Stock
MFR: Toshiba
SKU: 4N25
D45H2 General Electric PNP Expitaxial Silicon Transistor (NOS)
In Stock
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Transition Frequency (ft): 20 MHz
New Old Stock * No longer available for export
MFR: General Electric
SKU: D45H2
IRF510 N-Channel Power MOSFET Transistor 5.6A 100V 0.540 Ohm
In Stock
IRF510 Transistor, 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
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MRF171A M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)
In Stock
Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET
- Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 8 pF @ VDS = 28 V
- Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
- Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)
Parts we have available are early version just after Motorola sold to M/A-COM. All parts in stock are produced with original Motorola die.
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF171A-MA
QBH-105 Q-Bit RF Amplifier 0.5W 5-300 MHz (NOS)
In Stock
- High Gain: 12.2dB Typical
- DC Voltage: +19V
- Continuous RF Input Power: +13 dBm
New Old Stock
MFR: Q-BIT Corporation
SKU: QBH-105
QBH-110 Q-Bit RF Amplifier 0.5W 5-500MHz (NOS)
In Stock
- High Gain: 15.0dB Typical
- DC Voltage: +17V
- Continuous RF Input Power: +13 dBm
New Old Stock
MFR: Q-BIT
SKU: QBH-110
QBH-118 Q-Bit RF Amplifier 0.5W 3-100MHz NOS)
In Stock
- High Gain: 16.3 dB Typical
- DC Voltage: +20V
- Continuous RF Input Power: +13 dBm
New Old Stock
MFR: Q-BIT
SKU: QBH-118
2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor Matched Pair (2) (NOS)
In Stock
The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.
The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.
For a Matched Quad (4), simply order Two Pairs
MFR: Toshiba, Japan
New Old Stock * No Longer Available for Export
SKU: 2SC2782A-MP
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2N3771G ON Semiconductor Transistor NPN 40V 30A (NOS)
In Stock
High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.
Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • These Devices are Pb−Free and are RoHS Compliant
MFR: ON Semiconductors
&nbs2N3771G ON Semiconductor Transistor NPN 40V 30Ap;SKU: 2N3771G-ON
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2N3055 RCA 60v 15A NPN Silicon Transistor (NOS)
In Stock
Designed for general purpose switching and amplifier applications.
- Max voltage: 60V.
- Max current: 15 Amp collector, 7 Amp base.
- Dissipation: 115 watt.
- Package: TO-3 steel.
New Old Stock * No longer available for export
MFR: RCA
SKU: 2N3055-RCA