Transistors - RF, Mosfets, Misc.
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MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V
In Stock
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
- Guaranteed performance at 30 MHz, 28V: Output power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%
- Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB
- Low thermal resistance
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF141-MA
MRF141G M/A-COM RF Power FET 300W 175MHz 28V
In Stock
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
- Operating Frequency: 175 MHz
- Gain: 12 Db
- Output Power: 300 W
MFR: MA/COM
SKU: MRF141G-MA
MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)
In Stock
Made with original Motorola Die
Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MP-MA
MRF140 M/A-COM Transistor 150W 28V 150 MHz
In Stock
Made with original Motorola Die
Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MA
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MRF137 M/A-COM Transistor 30W 28V 400 MHz
In Stock
Designed for wideband large signal output and drive stages Product Image up to 400 MHz range. N–Channel enhancement mode
• Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency — 60% (Typical)
• Small– and large–signal characterization
• Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
Limit, 10 per customer.
MFR: M/A-COM
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MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz
In Stock
Made with original Motorola Die
Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF136Y-MA
MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz
In Stock
Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc
- Output power = 10 W
- Power gain = 12 dB min.
- Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
MRF: M/A-COM
SKU: MRF134-MA
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V
In Stock
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase angles
Applications
- Aerospace and Defense
- ISM
SKU: MRF150-MA
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MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V
In Stock
Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET
- MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13.5 dB, Efficiency = 50%
- Replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Facilitates manual gain control, ALC and modulation techniques
- Excellent thermal stability, ideally suited for Class A operation
- Low Crss — 4.0 pF @ VDS = 28 V
MFR: M/A-COM
SKU: MRF166C-MA
MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V
In Stock
Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET
- Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% Tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 0.8 pF Typical at VDS = 28 V
MFR: M/A-COM
SKU: MRF160-MA