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RD20HMF1 Mitsubishi Transistor 20 Watt 900 MHz 12.5V (NOS)
RD20HMF1 Mitsubishi Transistor 20 Watt 900 MHz 12.5V (NOS)

In Stock

$31.91

RoHS Compliance Silicon MOSFET Power Transistor 900MHz 20W
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD20HMF1

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RD30HUF1-101 Mitsubishi Transistor 30 Watt 520 MHz 12.5V (NOS)
RD30HUF1-101 Mitsubishi Transistor 30 Watt 520 MHz 12.5V (NOS)

In Stock

$23.91

Silicon MOSFET Power Transistor 520MHz 30W RoHS Compliant
New Old Stock * No longer available for export
MFR: Mitsubishi 
SKU: R30HUF1


See possible substitutes: RD35HUP2 or RD35HUF2

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RD45HMF1-101 Mitsubishi Transistor 45 Watt 900 MHz 12.5V (NOS)
RD45HMF1-101 Mitsubishi Transistor 45 Watt 900 MHz 12.5V (NOS)

In Stock

$29.91

RoHS Compliant Silicon MOSFET Power Transistor 900MHz 45W 12.5V
New Old Stock * No longer avilable for export
MFR: Mitsubishi 
SKU: RD45HMF1

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RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS) Icom IC-7000
RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS) Icom IC-7000

In Stock

$59.91

DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:  Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz  High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD70HHF1-101 is a RoHS compliant products.  RoHS compliance is indicate by the letter “G” after the lot marking.


Finals used in the HF/50 MHz section of the Icom IC-7000 transmitter.


New Old Stock * No longer available for export * End Of Life 2017
MFR: Mitsubishi, Japan
SKU: RD70HHF1

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RD70HVF1-101  Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS) Icom IC-7000
RD70HVF1-101 Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS) Icom IC-7000

In Stock

The RD70HVF1-101 is a Mitsubishi RF power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF frequency range, with a frequency range of 136-174 MHz.





The RD70HVF1-101 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.





Silicon MOSFET Power Transistor RoHS Compliant 175MHz 70W 520MHz 50W  (NOS)


MFR #: RD70HVF1-101


New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD70HVF1


Finals used in the 144 MHz section of the Icom IC-7000 transmitter.


See Data Sheet for more information

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RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V
RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

In Stock

Transistor 70 Watts 520 MHz 12.5 Volts


This MOS FET type transistor was specifically designed for VHF/UHF RF power amplifiers applications and for output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS Compliant


MFR #: RD70HUF2-501
MFR: Mitsubishi
SKU: RD70HUF2

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RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W
RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W

In Stock

MOSFET Silicon Power Transistor 175MHz - 520MHz 15W
RoHS Compliant
MFR #: RD15HVF1-501
MFR: Mitsubishi, Japan
SKU: RD15HVF1-501


EOL 12/2022

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RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V
RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V

In Stock

The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.


The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.


Will replace the original RD100HHF1-101.


MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi
Made in Japan
SKU: RD100HHF1C-501


Data Sheet

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RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W
RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W

Out of stock




Popular part used in Icom 7300.





RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications 


High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diode


RoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501


See Data Sheet for more information

RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V
RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V

In Stock

RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.



  • High Power and High Efficiency Pout=75Wtyp

  • Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp

  • Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz

  • Integrated gate protection diode.


RoHS Compliant
MFR: Mitsubishi
SKU: RD70HUP2-501


See Data Sheet


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