Transistors - RF, Mosfets, Misc.

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RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

In Stock

$49.91 As low as: $42.79

Transistor 70 Watts 520 MHz 12.5 Volts

This MOS FET type transistor was specifically designed for VHF/UHF RF power amplifiers applications and for output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS Compliant

MFR #: RD70HUF2-501
MFR: Mitsubishi
SKU: RD70HUF2

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RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W

In Stock

$14.91 As low as: $12.76

MOSFET Silicon Power Transistor 175MHz - 520MHz 15W
RoHS Compliant
MFR #: RD15HVF1-501
MFR: Mitsubishi, Japan
SKU: RD15HVF1-501

EOL 12/2022

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RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V

In Stock

$54.91 As low as: $44.72

The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.

The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.

Will replace the original RD100HHF1-101.

MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi
Made in Japan
SKU: RD100HHF1C-501

Data Sheet

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RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W

Out of stock

$39.91 As low as: $37.91

Popular part used in Icom 7300.

RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications

High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diode

RoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501

See Data Sheet for more information