Transistors - RF, Mosfets, Misc.
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MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz
In Stock
Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc
- Output power = 10 W
- Power gain = 12 dB min.
- Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
MRF: M/A-COM
SKU: MRF134-MA
MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz
In Stock
Made with original Motorola Die
Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF136Y-MA
MRF140 M/A-COM Transistor 150W 28V 150 MHz
In Stock
Made with original Motorola Die
Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MA
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MRF141G M/A-COM RF Power FET 300W 175MHz 28V
In Stock
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
- Operating Frequency: 175 MHz
- Gain: 12 Db
- Output Power: 300 W
MFR: MA/COM
SKU: MRF141G-MA
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)
In Stock
TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase angles
Applications
- Aerospace and Defense
- ISM
MFR: M/A-COM
SKU:MRF150-MA-MP
MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V
In Stock
Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz, N–Channel enhancement mode MOSFET
MFR: M/A-COM
SKU: MRF166W-MA
MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V
In Stock
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.
MRF: M/A-COM
SKU: MRF173CQ-MA
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz
In Stock
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.
MFR: M/A-COM
SKU: MRF173-MA
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)
Out of stock
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET
MRF: M/A-COM
SKU: MRF173MP-MA
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)
In Stock
TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase angles
Applications
- Aerospace and Defense
- ISM
MFR: M/A-COM
SKU: MRF150-MA-MQ