Transistors - RF, Mosfets, Misc.
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MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V
In Stock
Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.
- Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
- Built–in matching network for broadband operation using double match technique
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
- Characterized for 100 =8 500 MHz
MRF: M/A-COM
SKU: MRF327-MA
MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V
In Stock
Made with original Motorola Die
Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.
- Specified 28 V, 400 MHz characteristics — Output power = 125 W, Typical gain = 10 dB, Efficiency = 55% (typ.)
- Built–in input impedance matching networks for broadband operation
- Push–pull configuration reduces even numbered harmonics
- Gold metallization system for high reliability
- 100% tested for load mismatch
MRF: M/A-COM
SKU: MRF392-MA
MRF422 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 28 V
In Stock
Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: MA/COM
SKU: MRF422-MA-MP
MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V
In Stock
Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
MFR: M/A-COM
SKU: MRF429-MA
MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange
In Stock
Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.
• Specified 12.5 V, 30 MHz characteristics — Output power = 60 W, Minimum gain = 13 dB
MFR: M/A-COM
SKU: MRF455-MA
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MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V
In Stock
Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Min Frequency: 1 MHz
- Gain: 10 dB
- Bias Voltage: 12.5 V
- Max Frequency: 30 MHz
- Efficiency: 40 %
- Pout: 100 W
MFR: M/A-COM
SKU: MRF421-MA
MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)
In Stock
Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MRF: M/A-COM
SKU: MRF421MP-MA
MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V
In Stock
Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: MA/COM
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MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V
In Stock
Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
MFR: M/A-COM
SKU: MRF426-MA
MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V
In Stock
Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
MRF: M/A-COM
SKU: MRF428-MA