RD

Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.

* Indicates limited quantity / discontinued item. Check with Sales Staff for available quantity.

PART NUMBER	Vdd (V)	f (MHz)	Pout(W)	Package
RD00HHS1 *	12.5	30	0.3	SOT-89
RD00HVS1 *	1.5	175	0.5	SOT-89
RD01MUS1 *	7.2	520	0.8	SOT-89
RD01MUS2	7.2	520	0.8	SOT-89
RD01MUS2B *	7.2	527	1	SOT-89
RD02MUS1 *	7.2	175 / 520	2	SOT-89
RD02MUS1B *	7.2	175 / 520	2	SOT-89
RD05MMP1	7.2	941	5.5	PMM
RD06HHF1	12.5	30	6	TO-220S
RD06HVF1	12.5	175	6	TO-220S
RD07MUS2B	7.2	175 / 527 / 870	7	SLP
RD07MVS1	7.2	175 / 520	7	SLP
RD07MVS1B *	7.2	175 / 520	7	SLP
RD07MVS2 *	7.2	175 / 520	7	SLP
RD09MUP2	7.2	520	8	PMM
RD100HHF1	12.5	30	100	CERAMIC (LARGE)
RD12MVS1	7.2	175	11.5	SLP
RD15HVF1	12.5	175	15	TO-220S
RD16HHF1	12.5	30	16	TO-220S
RD20HMF1 *	12.5	900	20	CERAMIC (SMALL)
RD30HVF1 *	12.5	175	30	CERAMIC (SMALL)
RD30HUF1 *	12.5	520	30	CERMAIC (SMALL)
RD35HUF2	12.5	175 / 530	45 / 43 TYP.	HPM
RD35HUP2	12.5	175 / 530	35	HPM
RD45HMF1 *	12.5	900	45	CERAMIC (LARGE)
RD60HUF1	12.5	520	60	CERAMIC ( LARGE)
RD70HUF2	12.5	175 / 530	84 / 75 TYP.	HPM
RD70HVF1	12.5	175 / 520	70 / 50	CERAMIC (LARGE)

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RD07MVS2 Mitsubishi Transistor Silicon MOSFET 7 Watt 175/520 MHz (NOS)

In Stock

$8.91

RoHS Compliance Silicon MOSFET Power Transistor 175MHz 520MHz 7W
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD07MVS2-T112

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