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RD

Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.

* Indicates limited quantity / discontinued item.  Check with Sales Staff for available quantity.

PART NUMBER Vdd (V) f (MHz) Pout(W) Package
RD00HHS1 * 12.5 30 0.3 SOT-89
RD00HVS1 * 1.5 175 0.5 SOT-89
RD01MUS1 * 7.2 520 0.8 SOT-89
RD01MUS2 7.2 520 0.8 SOT-89
RD01MUS2B * 7.2 527 1 SOT-89
RD02MUS1 * 7.2 175 / 520 2 SOT-89
RD02MUS1B * 7.2 175 / 520 2 SOT-89
RD05MMP1 7.2 941 5.5 PMM
RD06HHF1 12.5 30 6 TO-220S
RD06HVF1 12.5 175 6 TO-220S
RD07MUS2B 7.2 175 / 527 / 870 7 SLP
RD07MVS1 7.2 175 / 520 7 SLP
RD07MVS1B * 7.2 175 / 520 7 SLP
RD07MVS2 * 7.2 175 / 520 7 SLP
RD09MUP2 7.2 520 8 PMM
RD100HHF1 12.5 30 100 CERAMIC (LARGE)
RD12MVS1 7.2 175 11.5 SLP
RD15HVF1 12.5 175 15 TO-220S
RD16HHF1 12.5 30 16 TO-220S
RD20HMF1 * 12.5 900 20 CERAMIC (SMALL)
RD30HVF1 * 12.5 175 30 CERAMIC (SMALL)
RD30HUF1 * 12.5 520 30 CERMAIC (SMALL)
RD35HUF2 12.5 175 / 530 45 / 43 TYP. HPM
RD35HUP2 12.5 175 / 530 35 HPM
RD45HMF1 * 12.5 900 45 CERAMIC (LARGE)
RD60HUF1 12.5 520 60 CERAMIC ( LARGE)
RD70HUF2 12.5 175 / 530 84 / 75 TYP. HPM
RD70HVF1 12.5 175 / 520 70 / 50 CERAMIC (LARGE)
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RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V
RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V

In Stock

RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.



  • High Power and High Efficiency Pout=75Wtyp

  • Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp

  • Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz

  • Integrated gate protection diode.


RoHS Compliant
MFR: Mitsubishi
SKU: RD70HUP2-501


See Data Sheet


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RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W
RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W

Out of stock




Popular part used in Icom 7300.





RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications 


High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diode


RoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501


See Data Sheet for more information

RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W
RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W

In Stock

MOSFET Silicon Power Transistor 175MHz - 520MHz 15W
RoHS Compliant
MFR #: RD15HVF1-501
MFR: Mitsubishi, Japan
SKU: RD15HVF1-501


EOL 12/2022

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RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V
RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V

In Stock

The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.


The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.


Will replace the original RD100HHF1-101.


MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi
Made in Japan
SKU: RD100HHF1C-501


Data Sheet

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RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V
RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

In Stock

Transistor 70 Watts 520 MHz 12.5 Volts


This MOS FET type transistor was specifically designed for VHF/UHF RF power amplifiers applications and for output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS Compliant


MFR #: RD70HUF2-501
MFR: Mitsubishi
SKU: RD70HUF2

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RD30HUF1-101 Mitsubishi Transistor 30 Watt 520 MHz 12.5V (NOS)
RD30HUF1-101 Mitsubishi Transistor 30 Watt 520 MHz 12.5V (NOS)

In Stock

$23.91

Silicon MOSFET Power Transistor 520MHz 30W RoHS Compliant
New Old Stock * No longer available for export
MFR: Mitsubishi 
SKU: R30HUF1


See possible substitutes: RD35HUP2 or RD35HUF2

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RD45HMF1-101 Mitsubishi Transistor 45 Watt 900 MHz 12.5V (NOS)
RD45HMF1-101 Mitsubishi Transistor 45 Watt 900 MHz 12.5V (NOS)

In Stock

$29.91

RoHS Compliant Silicon MOSFET Power Transistor 900MHz 45W 12.5V
New Old Stock * No longer avilable for export
MFR: Mitsubishi 
SKU: RD45HMF1

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RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS) Icom IC-7000
RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS) Icom IC-7000

In Stock

$59.91

DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:  Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz  High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD70HHF1-101 is a RoHS compliant products.  RoHS compliance is indicate by the letter “G” after the lot marking.


Finals used in the HF/50 MHz section of the Icom IC-7000 transmitter.


New Old Stock * No longer available for export * End Of Life 2017
MFR: Mitsubishi, Japan
SKU: RD70HHF1

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RD70HVF1-101  Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS) Icom IC-7000
RD70HVF1-101 Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS) Icom IC-7000

In Stock

The RD70HVF1-101 is a Mitsubishi RF power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF frequency range, with a frequency range of 136-174 MHz.





The RD70HVF1-101 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.





Silicon MOSFET Power Transistor RoHS Compliant 175MHz 70W 520MHz 50W  (NOS)


MFR #: RD70HVF1-101


New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD70HVF1


Finals used in the 144 MHz section of the Icom IC-7000 transmitter.


See Data Sheet for more information

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RD20HMF1 Mitsubishi Transistor 20 Watt 900 MHz 12.5V (NOS)
RD20HMF1 Mitsubishi Transistor 20 Watt 900 MHz 12.5V (NOS)

In Stock

$31.91

RoHS Compliance Silicon MOSFET Power Transistor 900MHz 20W
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD20HMF1

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