RD
Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.
* Indicates limited quantity / discontinued item. Check with Sales Staff for available quantity.
| PART NUMBER | Vdd (V) | f (MHz) | Pout(W) | Package |
| RD00HHS1 * | 12.5 | 30 | 0.3 | SOT-89 |
| RD00HVS1 * | 1.5 | 175 | 0.5 | SOT-89 |
| RD01MUS1 * | 7.2 | 520 | 0.8 | SOT-89 |
| RD01MUS2 | 7.2 | 520 | 0.8 | SOT-89 |
| RD01MUS2B * | 7.2 | 527 | 1 | SOT-89 |
| RD02MUS1 * | 7.2 | 175 / 520 | 2 | SOT-89 |
| RD02MUS1B * | 7.2 | 175 / 520 | 2 | SOT-89 |
| RD05MMP1 | 7.2 | 941 | 5.5 | PMM |
| RD06HHF1 | 12.5 | 30 | 6 | TO-220S |
| RD06HVF1 | 12.5 | 175 | 6 | TO-220S |
| RD07MUS2B | 7.2 | 175 / 527 / 870 | 7 | SLP |
| RD07MVS1 | 7.2 | 175 / 520 | 7 | SLP |
| RD07MVS1B * | 7.2 | 175 / 520 | 7 | SLP |
| RD07MVS2 * | 7.2 | 175 / 520 | 7 | SLP |
| RD09MUP2 | 7.2 | 520 | 8 | PMM |
| RD100HHF1 | 12.5 | 30 | 100 | CERAMIC (LARGE) |
| RD12MVS1 | 7.2 | 175 | 11.5 | SLP |
| RD15HVF1 | 12.5 | 175 | 15 | TO-220S |
| RD16HHF1 | 12.5 | 30 | 16 | TO-220S |
| RD20HMF1 * | 12.5 | 900 | 20 | CERAMIC (SMALL) |
| RD30HVF1 * | 12.5 | 175 | 30 | CERAMIC (SMALL) |
| RD30HUF1 * | 12.5 | 520 | 30 | CERMAIC (SMALL) |
| RD35HUF2 | 12.5 | 175 / 530 | 45 / 43 TYP. | HPM |
| RD35HUP2 | 12.5 | 175 / 530 | 35 | HPM |
| RD45HMF1 * | 12.5 | 900 | 45 | CERAMIC (LARGE) |
| RD60HUF1 | 12.5 | 520 | 60 | CERAMIC ( LARGE) |
| RD70HUF2 | 12.5 | 175 / 530 | 84 / 75 TYP. | HPM |
| RD70HVF1 | 12.5 | 175 / 520 | 70 / 50 | CERAMIC (LARGE) |
RD07MVS2 Mitsubishi Transistor Silicon MOSFET 7 Watt 175/520 MHz (NOS)
In Stock
RoHS Compliance Silicon MOSFET Power Transistor 175MHz 520MHz 7W
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD07MVS2-T112
RD01MUS1-T113 Mitsubishi Transistor (NOS)
In Stock
RoHS Compliance Silicon MOSFET Power Transistor 520MHz 1W
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD01MUS1-T113
RD01MUS2 Mitsubishi Transistor (NOS)
In Stock
RoHS Compliance Silicon MOSFET Power Transistor 520MHz 1W
Nw Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD01MUS2
RD02MUS1-T112 Mitsubishi Transistor (NOS)
In Stock
RoHS Compliance Silicon MOSFET Power Transistor 175MHz 520MHz 2W
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD02MUS1
RD06HHF1-101 Mitsubishi Transistor 6W 30 MHz 12.5V (NOS)
In Stock
RoHS Compliance, Silicon MOSFET Power Transistor 30 MHz 6 Watts
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD06HHF1
RD06HVF1 Mitsubishi Transistor 6W 175 MHz 12.5V (NOS)
In Stock
Silicon MOSFET Power Transistor 175MHz 6W
RoHS Compliant
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RDO6HVF1
Add to Cart
RD07MUS2B Mitsubishi Transistor (NOS)
In Stock
RD07MUS2B-T112 is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
RoHS COMPLIANT
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD07MUS2B
RD07MVS1 Mitsubishi MOSFET Power Transistor Mitsubishi 175MHz 520MHz 7W (NOS)
In Stock
RoHS Compliance Silicon MOSFET Power Transistor 175MHz 520MHz 7W
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD07MVS1
Add to Cart
RD07MVS1B Mitsubishi Transistor (NOS)
In Stock
RoHS Compliance Silicon MOSFET Power Transistor 175MHz 520MHz 7W
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD07MVS1B
RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W
Out of stock
Popular part used in Icom 7300.
RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications
High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diode
RoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501
See Data Sheet for more information