MRF500 Series

MRF517 Microsemi NPN Silicon RF and Microwave Discrete Low Power Transistor

In Stock

MRF517 NPN Silicon RF and Microwave Discrete Low Power Transistor

New Old Stock
MFR: Microsemi
SKU: MRF517-MSC

MRF545 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

In Stock

Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.

• Silicon PNP, high Frequency, high breakdown, Transistor


• Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz


• High Collector Base Breakdown Voltage - BVCBO = 100 V (min)


• High FT - 1400 MHz

No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF545-MSC

MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)

In Stock

Designed primarily for wideband large signal stages in the VHF frequency range.

• Specified @ 12.5 V, 175 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11.5 dB, Efficiency 60% (Typ)


• Cost Effective PowerMacro Package


• Electroless Tin Plated Leads for Improved Solderability

No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
MFR: MRF553-MSC

MRF557 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

In Stock

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

• Low Noise - 2.5 dB @ 500 MHZ


• Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz


• Ftau - 5.0 GHz @ 10v, 75mA


• Cost Effective MacroX Package

New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF557-MSC

MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)

In Stock

Designed primarily for wideband large signal stages in the UHF frequency range.

• Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%


• Cost Effective Macro X Package


• Electroless Tin Plated Leads for Improved Solderability

New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF559-MSC

MRF5943 Microsemi RF & Microwave Discrete Low Power Transistor (NOS)

In Stock

Designed for general-purpose RF amplifier applications, such as; pre-drivers, drivers, Oscillators, etc.

• Maximum Available Gain = 17dB @ 300MHz

New Old Stock * No longer available for export
MFR: Microsemi

MRF581G Microsemi Transistor (NOS)

In Stock

• Transistor Type: NPN


• Voltage - Collector Emitter Breakdown (Max): 18V


• Frequency - Transition: 5GHz


• Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz


• Gain: 13dB ~ 15.5dB


• Power - Max: 1.25W


• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V


• Current - Collector (Ic) (Max): 200mA


• Operating Temperature: 150°C (TJ)


• Mounting Type: Surface Mount

No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF581G-MSC

MRF586 Microsemi RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)

In Stock

Designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.

• Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA


• G_{U max}= 12.5dB (typ) @ 300 MHz, 15v, 40mA


• |S21|²= 12.5dB (typ) @ 300 MHz, 15v, 40mA

New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF586-MSC

MRF5943C Microsem RF & Microwave Discrete Low Power Transistor (NOS)

In Stock

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

• Low Noise - 2.5 dB @ 500 MHZ


• Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz


• Ftau - 5.0 GHz @ 10v, 75mA


• Cost Effective MacroX Package

New Old Stock * No longer available for export
MRF: Microsemi
SKU: MRF5943C-MSC
 

MRF555 Motorola NPN Silicon RF Low Power Transistor 12.5 V 470 MHz 1.5 W (NOS)

In Stock

Designed primarily for wideband large signal stages in the UHF frequency range.

New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF555-MOTO