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Misc. Transistors

Please choose from the following MISC. TRANSISTOR Sub-Catagory choices:

NOTE: THESE ARE TRANSISTORS WITH LETTER OR NUMBERS STARTING WITH:

A - E

F - J

K - O

P - T

U - #

 

LOW NOISE GAS FET

PNP POWER SUPPLY SWITCHING

 

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MGA87563  AEROFLEX / INMET Monolithic Microwave Integrated Circuit .0.5-4.3 GHz 3 Volts (NOS)
MGA87563 AEROFLEX / INMET Monolithic Microwave Integrated Circuit .0.5-4.3 GHz 3 Volts (NOS)

In Stock

$2.91

Fabricated using gallium arsenide (GaAs)
New Old Stock * No longer available for export
MFR: Aeroflex / Inmet
SKU: MGA87563-BLK


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MRF966 Motorola N-Channel Dual-Gate GaAs Field-Effect Transistor 12V (NOS)
MRF966 Motorola N-Channel Dual-Gate GaAs Field-Effect Transistor 12V (NOS)

In Stock

$6.91

Depletion mode dual-gate MES FET designed for high frequency amplifier and mixer applications.


New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF966

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3SK177 NEC N-Channel GaAs Dual-Gate MES Filed-Effect Transistor (NOS)
3SK177 NEC N-Channel GaAs Dual-Gate MES Filed-Effect Transistor (NOS)

In Stock


  • RF Amplifier for UHF TV Tuner. 

  • 4 PIn Mini Mold


New Old Stock * No longer available for export
MFR: NEC Corporation
SKU: 3SK177

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3SK174 / NE25137 NEC Dual Gate FET Transistor (NOS)
3SK174 / NE25137 NEC Dual Gate FET Transistor (NOS)

In Stock

$4.91

New Old Stock * No longer available for export
MFR: NEC
SKU: 3SK174/NE25137

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MGF4919G Mitsubishi GasFet Transistor
MGF4919G Mitsubishi GasFet Transistor

In Stock

GasFet Transistor
MFR: Mitsubishi
SKU: MGF4919G

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MGF4319G Mitsubishi Gas fet
MGF4319G Mitsubishi Gas fet

In Stock

$7.95

Transisor, gas fet
MFR: Mitsubishi
SKU: MGF4319G

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MGF1501 N-Channel FET (NOS)
MGF1501 N-Channel FET (NOS)

In Stock

$8.91

Power Dissipation (PD):0.15 W
Drain current (ID):0.06 A
Drain-source voltage (VDSS):6


New Old Stock
SKU: MGF1501

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MGF1302 Mitsubishi Low-Noise GaAs FET Transistor (NOS)
MGF1302 Mitsubishi Low-Noise GaAs FET Transistor (NOS)

In Stock

$19.91

MGF1302 Mitsubishi Low-Noise GaAs FET (NOS)


The MFG1302 is a low-noise GaAs FET with an N-Channel Schottky gate, which is designed for use in the S to X band amplifiers and oscillators.  The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.


New Old Stock * No longer available for export
MFR: Mitsubishi


Data Sheet


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BF980 Philips Silicon N-Channel Dual Gate MOS-FET Transistor (NOS)
BF980 Philips Silicon N-Channel Dual Gate MOS-FET Transistor (NOS)

In Stock

$2.91

Depletion type field-effect trnasistor in a plastic X-package. Intended for UHF applications with 12v Supply voltage.



  • Drain Source Voltage (MAX): 18v

  • Drain Current (MAX): 30mA

  • Total Power disipation (MAX): 225mW


New Old Stock * No longer available for export
MFR: Philips Electronics
SKU: BF980

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