2SC
Please choose from the following 2SC Sub-Catagory choices:
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2SC495 Toshiba Silicon NPN Epitaxial Transistor (NOS)
In Stock
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.55 W
- Maximum Collector-Base Voltage |Vcb|: 70 V
New Old Stock * No longer available for export
MFR: Toshiba Corporation
SKU: 2SC495
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2SC789 Toshiba Silicon NPN Power Transistor (NOS)
In Stock
Transistor Silicon NPN Power
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC789
2SC1173 Toshiba NPN Silicon Transistor (NOS)
In Stock
NPN Silicon Transistor
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC1173
2SC2347 Toshiba Transistor Silicon NPN Epitaxial Planar type (NOS)
In Stock
Transistor Silicon NPN Epitaxial Planar type
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC2347
2SC2914 Toshiba Transistor NPN Silicon TO-3 (NOS)
In Stock
- High breakdown voltage
- Fast switching speed.
- Wide area of safe operation
- For switching regulator applications
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC2914
2SC2782 Toshiba Silicon NPN Epitaxial Planar Transistor (NOS)
In Stock
Power: 80 Watts (Min.) Frequency: 175 MHz
VCC: 12.5V Pi: 18 Watts
NOTE: Early production part - pre 2005. It is non-Rohs compliant.
Substitute for 2SC5125, MRF247, SRF3417
New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2782
2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor (NOS)
In Stock
The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.
The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.
Will substitute for 2SC5125
New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2782A
2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor (Pull)
In Stock
The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.
The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.
Used * No longer available for export
MFR: Toshiba
Made in Japan
SKU: 2SC2782A-P
2SC3419Y Toshiba NPN Epitaxial Transistor (NOS)
In Stock
- Low Saturation Voltage: Vce (sat) = 0.25v (typ.) (Ic=500mA, Ib = 50mA)
- High Collector Power Dissaption: Pc=1.2w (Ta=25°C)
- Complementary to 2SA1356
New Old Stock * Not for Export
MFR: Toshiba
SKU: 2SC3419Y
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2SC3421Y Toshiba Silicon NPN Epitaxial Type Transistor (NOS)
In Stock
Audio Frequency Power Amplifier Applications. Complementary to 2SA1358.
Suitable for driver of 60 to 80 watts audio amplifier
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC3421Y
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