Transistors - RF, Mosfets, Misc.
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MRF321 M/A-COM NPN Silicon Power Transistor 10W 400MHz 28V (NOS)
In Stock
Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc; Output power = 10 W, Power gain = 12 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF321-MA
MRF323 M/A-COM Transistor 20 watt 28v 400 MHz
In Stock
Made with original Motorola Die
- Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input impedance
MFR: M/A-COM
SKU: MRF323-MA
MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V
In Stock
Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.
- Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
- Built–in matching network for broadband operation using double match technique
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
- Characterized for 100 =8 500 MHz
MRF: M/A-COM
SKU: MRF327-MA
MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V
In Stock
Made with original Motorola Die
Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.
- Specified 28 V, 400 MHz characteristics — Output power = 125 W, Typical gain = 10 dB, Efficiency = 55% (typ.)
- Built–in input impedance matching networks for broadband operation
- Push–pull configuration reduces even numbered harmonics
- Gold metallization system for high reliability
- 100% tested for load mismatch
MRF: M/A-COM
SKU: MRF392-MA
MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V
In Stock
Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
- 100% tested for load mismatch at all phase angles with VSWR 30:1
- Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
- Simplified AVC, ALC and modulation
- Typical data for power amplifiers in industrial and commercial applications:
- Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
- Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%
MRF: M/A-COM
MRF275G-MA
MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V
In Stock
Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 17 pF typ. @ VDS = 28 V
MFR: M/A-COM
SKU: MRF275L-MA
MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz
In Stock
Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc
- Output power = 10 W
- Power gain = 12 dB min.
- Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
MRF: M/A-COM
SKU: MRF134-MA
MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz
In Stock
Made with original Motorola Die
Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF136Y-MA
MRF140 M/A-COM Transistor 150W 28V 150 MHz
In Stock
Made with original Motorola Die
Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MA
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MRF141G M/A-COM RF Power FET 300W 175MHz 28V
In Stock
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
- Operating Frequency: 175 MHz
- Gain: 12 Db
- Output Power: 300 W
MFR: MA/COM
SKU: MRF141G-MA