Transistors - RF, Mosfets, Misc.
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RFM01U7P Toshiba Transistor 1.2 watt 10.8dB Surface Mount (NOS)
In Stock
Transistor 1.2 watt 10.8dB Surface Mount
New Old Stock * No longer available for export
MFR: Toshiba
SKU: RFM01U7P
RFM03U3CT Toshiba Transistor 3 watt 15dB Surface Mount (NOS)
In Stock
Transistor 3 watt 15dB Surface Mount
New Old Stock * No longer available for export
MFR: Toshiba
SKU: RFM03U3CT
RFM04U6P Toshiba Transistor 4.3 watt 13.3dB Surface Mount (NOS)
In Stock
Transistor 4.3 watt 13.3dB Surface Mount
New Old Stock * No longer available for export
MFR: Toshiba
SKU: RFM04U6P
RFM08U9X Toshiba Transistor 7.5watt 11.7dB Surface Mount (NOS)
In Stock
Transistor 7.5 Watt 11.7dB Surface Mount
New Old Stock * No longer available for export
MFR: Toshiba
SKU: RFM08U9X
2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor (Pull)
In Stock
The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.
The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.
Used * No longer available for export
MFR: Toshiba
Made in Japan
SKU: 2SC2782A-P
2SC2914 Toshiba Transistor NPN Silicon TO-3 (NOS)
In Stock
- High breakdown voltage
- Fast switching speed.
- Wide area of safe operation
- For switching regulator applications
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC2914
2SC2782 Toshiba Silicon NPN Epitaxial Planar Transistor (NOS)
In Stock
Power: 80 Watts (Min.) Frequency: 175 MHz
VCC: 12.5V Pi: 18 Watts
NOTE: Early production part - pre 2005. It is non-Rohs compliant.
Substitute for 2SC5125, MRF247, SRF3417
New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2782
2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor (NOS)
In Stock
The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.
The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.
Will substitute for 2SC5125
New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2782A
2SC2347 Toshiba Transistor Silicon NPN Epitaxial Planar type (NOS)
In Stock
Transistor Silicon NPN Epitaxial Planar type
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC2347
2SC1173 Toshiba NPN Silicon Transistor (NOS)
In Stock
NPN Silicon Transistor
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC1173