Transistors - RF, Mosfets, Misc.
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MGA87563 AEROFLEX / INMET Monolithic Microwave Integrated Circuit .0.5-4.3 GHz 3 Volts (NOS)
In Stock
Fabricated using gallium arsenide (GaAs)
New Old Stock * No longer available for export
MFR: Aeroflex / Inmet
SKU: MGA87563-BLK
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MGF1302 Mitsubishi Low-Noise GaAs FET Transistor (NOS)
In Stock
MGF1302 Mitsubishi Low-Noise GaAs FET (NOS)
The MFG1302 is a low-noise GaAs FET with an N-Channel Schottky gate, which is designed for use in the S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
New Old Stock * No longer available for export
MFR: Mitsubishi
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MGF1501 N-Channel FET (NOS)
In Stock
Power Dissipation (PD):0.15 W
Drain current (ID):0.06 A
Drain-source voltage (VDSS):6
New Old Stock
SKU: MGF1501
MGF4319G Mitsubishi Gas fet
In Stock
Transisor, gas fet
MFR: Mitsubishi
SKU: MGF4319G
MGF4919G Mitsubishi GasFet Transistor
In Stock
GasFet Transistor
MFR: Mitsubishi
SKU: MGF4919G
MRF641 TRW NPN Silicon RF Power Transistor (NOS)
In Stock
Designed for 12.5 Volt UHF large-scale amplifier applications.
New Old Stock * No longer available for export
MFR: TRW
SKU: MRF641-TRW
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MRF644 TRW Transistor 470 MH, 25w 12.5v (NOS)
In Stock
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz• Specified 12.5 Volt, 470 MHz
New Old Stock * No longer available for export
MFR: TRW
SKU: MRF644-TRW
2SC4123 NPN Triple Diffused Planar Silicon Transistor
In Stock
2SC4123 Transistor, NPN Triple Diffused Planar Silicon Transistor No longer available for Export, (NOS)
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2SC4167 Mitsubishi NPN Silicon Epitaxial Planar Transistor
In Stock
2SC4167 Mitsubishi NPN Silicon Epitaxial Planar Transistor
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: 2SC4167
2SC4200 Toshiba Silicon NPN Epitaxial Transistor
In Stock
2SC4200 Toshiba Silicon NPN Epitaxial Transistor (NOS)
MFR: Toshiba Electronics
SKU: 2SC4200
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