Transistors - RF, Mosfets, Misc.
Please click on a subcategory.

2N5031 Microsemi RF & Microwave Discrete Low Power Transistor
In Stock
- 1.2 GHz Current-Gain Bandwidth @ 5mA IC
- Maximum Unilateral Gain: 12dB (Typical) @ 400 MHz
MFR: MIcrosemi
SKU: 2N5031
Add to Cart

2N3375 Microsemi Silicon NPN RF Power Transistor 250MHz (NOS)
In Stock
Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region.
- Maximum Collector Power Dissipation (Pc): 12 W
- Maximum Collector-Base Voltage |Vcb|: 65 V

MRF227 Microsemi NPN Silicon RF Power Transistor 12.5 V 225 MHz 3W
In Stock
Designed for 12.5 Volt VHF large-signal power amplifier applications in communication equipment operating at 225 MHz. Ideally suited for Class E citizens band radio.
- Specified 12.5 Volt, 225 MHz Characteristics- Output Power= 3.0 W, Minimum Gain= 13.5 dB, efficiency= 60%
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF227-MSC

MRF237 Microsemi NPN Silicon RF Power Transistor 12.5 V/90 MHz/15 W (NOS)
In Stock
Specified 12.5 Volt,175 MHz Characteristics- Output Power= 4.0 W, Minimum Gain= 12 dB, efficiency= 50%
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF237-MSC

MS1490 Transistor, Microsemi
In Stock
MS1490 Transistor, NPN Silicon Transistor, 50 Watt, 12.5v, MFR: Microsemi (Limited Quantity-NOS)
Add to Cart

MRF4427 Microsemi RF & Microwave Discrete Low Power Transistor 20dB 200 MHz (NOS)
In Stock
Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.
- Low Cost SO-8 Plastic Surface Mount Package.
- S-Parameter Characterization
- Tape and Reel Packaging Options Available
- Low Voltage Version of MRF3866
- Maximum Available Gain – 20dB(typ) @ 200MHz
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF4427-MSC