Transistors - RF, Mosfets, Misc.
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MRF175LU M/A-COM Transistor RF MOSFET 100W 400MHz 28V (NOS)
In Stock
Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF175LU-MA
MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V
In Stock
Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET.
- Typical performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
- Low thermal resistance
- Low Crss — 10 pF typ. @ VDS = 28 V
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
- Excellent thermal stability; suited for Class A operation
MRF: M/A-COM
SKU: MRF177-MA
MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V
In Stock
Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
- 100% tested for load mismatch at all phase angles with VSWR 30:1
- Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
- Simplified AVC, ALC and modulation
- Typical data for power amplifiers in industrial and commercial applications:
- Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
- Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%
MRF: M/A-COM
MRF275G-MA
MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V
In Stock
Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 17 pF typ. @ VDS = 28 V
MFR: M/A-COM
SKU: MRF275L-MA
MRF313 M/A-COM NPN Silicon High-Frequency Transistor 1.0W 400MHz 28V (NOS)
In Stock
Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.
- Specified 28 V, 400 MHz characteristics — Output power = 1.0 W, Power gain = 15 dB min., Efficiency = 45% typ.
- Emitter ballast and low current density for improved MTBF
- Common emitter for improved stability
New Old Stock * No longer available for export
MRF: M/A-COM
SKU: MRF313-MA
MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V
In Stock
Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
MRF: M/A-COM
SKU: MRF314-MA
MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V Matched Pair (2)
In Stock
Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
MRF: MA/COM
SKU: MRF314MP-MA
MRF317 M/A-COM NPN Silicon Power Transistor 100W 30-200MHz 28V
In Stock
Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 100 W, Minimum gain = 9.0 dB
- Built–in matching network for broadband operation
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- High output saturation power — ideally suited for 30 W carrier/120 W
- Peak AM amplifier service
- Guaranteed performance in broadband test fixture
MFR: M/A-COM
SKU: MRF317-MA
MRF321 M/A-COM NPN Silicon Power Transistor 10W 400MHz 28V (NOS)
In Stock
Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc; Output power = 10 W, Power gain = 12 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF321-MA
MRF323 M/A-COM Transistor 20 watt 28v 400 MHz
In Stock
Made with original Motorola Die
- Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input impedance
MFR: M/A-COM
SKU: MRF323-MA