Transistors - RF, Mosfets, Misc.
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MRF466 Motorola NPN Silicon Power Transistor 40W (PEP or CW) 30MHz 28V Matched Pair (2) (NOS)
In Stock
Designed primarily for applications as a high-power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine, and base station equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 40 W (PEP or CW), Minimum gain = 15 dB, Efficiency = 40%, Intermodulation distortion d3= –30 dB (Max)
- Guarenteed Ruggedness
- 2N5941 Replacement
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF466MP
MRF497 Motorola NPN Silicon RF Power Transistor 40W 50 MHz 12V (NOS) (Sub for MRF477)
In Stock
Designed for 12.5 volt VHF large-signal power amplifier applications in commercial and industrial equipment operating in the 25-50 MHz frequency range.
High Gain replacement for MRF477.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF497
MRF497 Motorola NPN Silicon RF Power Transistor 40W 50 MHz 12V Matched Pair (2) (NOS)
In Stock
Designed for 12.5 volt VHF large-signal power amplifier applications in commercial and industrial equipment operating in the 25-50 MHz frequency range.
High Gain replacement for MRF477.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF497-MP
MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V
In Stock
Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
MRF: M/A-COM
SKU: MRF428-MA
MRF426 M/A-COM NPN Silicon Power Transistor Matched Pair 25W (PEP) 30MHz 28V
In Stock
Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
MFR: M/A-COM
SKU: MRF426MP-MA
MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V
In Stock
Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.
- Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
- Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Class A and AB characterization
- BLX 13 equivalent
MFR: M/A-COM
SKU: MRF426-MA
MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V
In Stock
Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: MA/COM
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MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)
In Stock
Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MRF: M/A-COM
SKU: MRF421MP-MA
MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V
In Stock
Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Min Frequency: 1 MHz
- Gain: 10 dB
- Bias Voltage: 12.5 V
- Max Frequency: 30 MHz
- Efficiency: 40 %
- Pout: 100 W
MFR: M/A-COM
SKU: MRF421-MA
MRF4427 Microsemi RF & Microwave Discrete Low Power Transistor 20dB 200 MHz (NOS)
In Stock
Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.
- Low Cost SO-8 Plastic Surface Mount Package.
- S-Parameter Characterization
- Tape and Reel Packaging Options Available
- Low Voltage Version of MRF3866
- Maximum Available Gain – 20dB(typ) @ 200MHz
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF4427-MSC