Transistors - RF, Mosfets, Misc.
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MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)
In Stock
Designed primarily for wideband large signal stages in the VHF frequency range.
- Specified @ 12.5 V, 175 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11.5 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Package
- Electroless Tin Plated Leads for Improved Solderability
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
MFR: MRF553-MSC
MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon NPN, high Frequency, high breakdown Transistor
- Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
New Old Stock * No longer available for export
MFR: APT
MRF517 Microsemi NPN Silicon RF and Microwave Discrete Low Power Transistor
In Stock
MRF517 NPN Silicon RF and Microwave Discrete Low Power Transistor
New Old Stock
MFR: Microsemi
SKU: MRF517-MSC
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MRF517 APT RF & Microwave Discrete Low Power Transistor
In Stock
The MRF517 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; pre-driver, driver, and output stages.
- Silicon NPN, To-39 packaged VHF/UHF Transistor
- Gpe = 10 dB (typ) @ 60 mA, 300 MHz
- 3 GHz Current-Gain Bandwidth Product @ 60mA
- Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz
MFR: Advanced Power Technology RF
SKU: MRF517-APT
MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)
In Stock
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Packa
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MRF: APT
SKU: MRF557-APT
MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)
In Stock
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
- Cost Effective Macro X Package
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF559-MSC
MRF581G Microsemi Transistor (NOS)
In Stock
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF581G-MSC
MRF586 Microsemi RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)
In Stock
Designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.
- Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA
- GU max= 12.5dB (typ) @ 300 MHz, 15v, 40mA
- |S21|2= 12.5dB (typ) @ 300 MHz, 15v, 40mA
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF586-MSC
MRF5943C Microsem RF & Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
- Low Noise - 2.5 dB @ 500 MHZ
- Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
- Ftau - 5.0 GHz @ 10v, 75mA
- Cost Effective MacroX Package
New Old Stock * No longer available for export
MRF: Microsemi
SKU: MRF5943C-MSC
MRF5943G APT RF & Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillator.
- Low Cost SO-8 Plastic Surface Mount Package
- S-Parameter Characterization
- Maximum Available Gain: 17dB @ 300MHz
New Old Stock * No longer available for export
MFR: Advanced Power Technology RF (APTRF)
SKU: MRF5943G-APT