Transistors - RF, Mosfets, Misc.
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MRF904 Microsemi RF & Microwave Discrete Low Power Transistor 500 MHz (NOS)
In Stock
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
- Low Noise - 2.5 dB @ 500 MHZ
- Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
- Ftau - 5.0 GHz @ 10v, 75mA
- Cost Effective MacroX Package
New Old Stock * No longer availabel for export
MFR: Microsemi
SKU: MRF904-MSC
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MRF630 Microsemi RF Power Transistor NPN Silicon 12.5 V 470 MHz 3.0 W (NOS)
In Stock
Designed for 12.5 Volt UHF large-signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF630-MSC
MRF555 Motorola NPN Silicon RF Low Power Transistor 12.5 V 470 MHz 1.5 W (NOS)
In Stock
Designed primarily for wideband large signal stages in the UHF frequency range.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF555-MOTO
MRF517 Microsemi NPN Silicon RF and Microwave Discrete Low Power Transistor
In Stock
MRF517 NPN Silicon RF and Microwave Discrete Low Power Transistor
New Old Stock
MFR: Microsemi
SKU: MRF517-MSC
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MRF545 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon PNP, high Frequency, high breakdown, Transistor
- Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF545-MSC
MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)
In Stock
Designed primarily for wideband large signal stages in the VHF frequency range.
- Specified @ 12.5 V, 175 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11.5 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Package
- Electroless Tin Plated Leads for Improved Solderability
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
MFR: MRF553-MSC
MRF5943 Microsemi RF & Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed for general-purpose RF amplifier applications, such as; pre-drivers, drivers, Oscillators, etc.
- Maximum Available Gain = 17dB @ 300MHz
New Old Stock * No longer available for export
MFR: Microsemi
MRF557 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
- Low Noise - 2.5 dB @ 500 MHZ
- Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
- Ftau - 5.0 GHz @ 10v, 75mA
- Cost Effective MacroX Package
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF557-MSC
MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)
In Stock
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
- Cost Effective Macro X Package
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF559-MSC
MRF581G Microsemi Transistor (NOS)
In Stock
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF581G-MSC