Transistors - RF, Mosfets, Misc.
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2SC2258 Silicon NPN Transistor
In Stock
2SC2258 Transistor, Silicon NPN Transistor No longer available for Export, (NOS)
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2SC2245 Fujitsu Silicon NPN Power Transistor (NOS)
In Stock
2SC2245 Fujitsu Silicon NPN Power Transistor
New Old Stock * No longer available for export
MFR: Fujitsu Components Limited
SKU: 2SC2245
2SC2238 Toshiba Transistor (NOS)
In Stock
Transistor
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC2238Y
2SC2353 NEC Transistor (NOS)
In Stock
2SC2353 NEC Transistor (NOS)
New Old Stock
MFR: NEC
SKU: 2SC2353
2SC2379 Toshiba Silicon NPN Epitaxial Planar
In Stock
2SC2379 Toshiba Silicon NPN Epitaxial Planar
New Old Stock
MFR: Toshiba
SKU: 2SC2379
2SC2381 Toshiba Silicon NPN Epitaxial PlanarTransistor (NOS)
In Stock
New Old Stock * No longer available for export
MFR: Toshiba - Made in Japan
SKU: 2SC2381
2SC2290 Toshiba Transistors Matched Quad (4) (Early Version) (NOS)
In Stock
The 2SC2290 is a bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a high-frequency transistor commonly used in RF power amplifier circuits.
The early version of the 2SC2290 transistor was a single transistor package. This version was commonly used in a variety of applications, such as in citizen band (CB) radios, linear amplifiers, and other high-frequency communication systems.
The 2SC2290 transistor is a high-quality and reliable component that offers excellent performance in a wide range of high-frequency applications. Its high power output, frequency range, and compact design make it a popular choice for use in various RF power amplifier circuits.
Transistors Matched Quad (4) (Early Version)
Silicon NPN Epitaxial Planar TypeTransistors
New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2290-MQ
2SC2290 Toshiba Transistors Matched Pair (2) (Early Version) (NOS)
In Stock
The 2SC2290 is a bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a high-frequency transistor commonly used in RF power amplifier circuits.
The early version of the 2SC2290 transistor was a single transistor package. This version was commonly used in a variety of applications, such as in citizen band (CB) radios, linear amplifiers, and other high-frequency communication systems.
The 2SC2290 transistor is a high-quality and reliable component that offers excellent performance in a wide range of high-frequency applications. Its high power output, frequency range, and compact design make it a popular choice for use in various RF power amplifier circuits.
Matched Pair (2) Transistors Silicon NPN Epitaxial
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC2290-MP
2SC2290A Toshiba Transistors "Red Dot" Pb Free RoHS Compliant Matched Quad (4) (NOS)
In Stock
The 2SC2290A is a bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is an improved version of the 2SC2290 transistor, featuring enhancements such as reduced on-resistance and improved linearity.
The 2SC2290A transistor is a high-quality and reliable component that offers excellent performance in a wide range of high-frequency applications. Its high power output, frequency range, and lead-free and RoHS compliant design make it a popular choice for use in various RF power amplifier circuits.
Silicon NPN Epitaxial Planar Type 2-30 MHz SSB Linear Power Amplifier Applications, Low Supply Voltage Use
- Specified 12.5V, 28MHz Characteristics
- Output Power : Po=60W PEP
- Power Gain : Gp=11.8dB (Min.)
- Collector Efficiency : C = 35% (Min.)
- Intermodulation Distortion : IMD = - 30dB (Max)
New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2290A-MQ
2SC2290A Toshiba Transistors "Red Dot" Pb Free RoHS Compliant Matched Paid (2) (NOS)
In Stock
The 2SC2290A is a bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is an improved version of the 2SC2290 transistor, featuring enhancements such as reduced on-resistance and improved linearity.
The 2SC2290A transistor is a high-quality and reliable component that offers excellent performance in a wide range of high-frequency applications. Its high power output, frequency range, and lead-free and RoHS compliant design make it a popular choice for use in various RF power amplifier circuits.
Silicon NPN Epitaxial Planar Type 2-30 MHz SSB Linear Power Amplifier Applications,
Low Supply Voltage Use
- Specified 12.5V, 28MHz Characteristics
- Output Power : Po=60W PEP
- Power Gain : Gp=11.8dB (Min.)
- Collector Efficiency : C = 35% (Min.)
- Intermodulation Distortion : IMD = - 30dB (Max)
New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2290A-MP