Transistors - RF, Mosfets, Misc.
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MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)
In Stock
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
- Cost Effective Macro X Package
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF559-MSC
MRF581G Microsemi Transistor (NOS)
In Stock
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF581G-MSC
MRF586 Microsemi RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)
In Stock
Designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.
- Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA
- GU max= 12.5dB (typ) @ 300 MHz, 15v, 40mA
- |S21|2= 12.5dB (typ) @ 300 MHz, 15v, 40mA
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF586-MSC
MRF5943C Microsem RF & Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
- Low Noise - 2.5 dB @ 500 MHZ
- Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
- Ftau - 5.0 GHz @ 10v, 75mA
- Cost Effective MacroX Package
New Old Stock * No longer available for export
MRF: Microsemi
SKU: MRF5943C-MSC
MRF5943G APT RF & Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillator.
- Low Cost SO-8 Plastic Surface Mount Package
- S-Parameter Characterization
- Maximum Available Gain: 17dB @ 300MHz
New Old Stock * No longer available for export
MFR: Advanced Power Technology RF (APTRF)
SKU: MRF5943G-APT
MRF5943 Microsemi RF & Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed for general-purpose RF amplifier applications, such as; pre-drivers, drivers, Oscillators, etc.
- Maximum Available Gain = 17dB @ 300MHz
New Old Stock * No longer available for export
MFR: Microsemi
MRF517 Microsemi NPN Silicon RF and Microwave Discrete Low Power Transistor
In Stock
MRF517 NPN Silicon RF and Microwave Discrete Low Power Transistor
New Old Stock
MFR: Microsemi
SKU: MRF517-MSC
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MRF517 APT RF & Microwave Discrete Low Power Transistor
In Stock
The MRF517 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; pre-driver, driver, and output stages.
- Silicon NPN, To-39 packaged VHF/UHF Transistor
- Gpe = 10 dB (typ) @ 60 mA, 300 MHz
- 3 GHz Current-Gain Bandwidth Product @ 60mA
- Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz
MFR: Advanced Power Technology RF
SKU: MRF517-APT
MRF5007 Motorola RF Power Field Effect Mosfet Transistor RF 512 MHz 7.0W 7.5V (NOS)
In Stock
RF Power Field Effect Transistor RF Mosfet 512 MHz 7.0W 7.5V
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF5007
MRF5003 Motorola RF Power Field Effect Transistor RF MOSFET N–Channel Enhancement–Mode 512 MHz 7.5V 3.0W (NOS)
In Stock
Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF5003