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MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)
MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)

In Stock

Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.



  • Silicon NPN, high Frequency, high breakdown Transistor

  • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz

  • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)

  • High FT - 1400 MHz


New Old Stock * No longer available for export
MFR: APT

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MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)
MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)

In Stock

Designed primarily for wideband large signal stages in the UHF frequency range.



  • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)

  • Cost Effective PowerMacro Packa

  • Electroless Tin Plated Leads for Improved Solderability


New Old Stock * No longer available for export
MRF: APT
SKU: MRF557-APT

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2 Item(s)