Transistors - RF, Mosfets, Misc.
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MRF559 Thomson RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)
In Stock
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
- Cost Effective Macro X Package
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MFR: Thomson Components
SKU: MRF559-TC
MRF521G Motorola PNP Silicon High-Frequency Transistor (NOS)
In Stock
Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF521G
MRF555 Motorola NPN Silicon RF Low Power Transistor 12.5 V 470 MHz 1.5 W (NOS)
In Stock
Designed primarily for wideband large signal stages in the UHF frequency range.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF555-MOTO
MRF586 Motorola RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)
In Stock
Designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.
- Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA
- GU max= 12.5dB (typ) @ 300 MHz, 15v, 40mA
- |S21|2= 12.5dB (typ) @ 300 MHz, 15v, 40mA
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF586-MOT
MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)
In Stock
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Packa
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MRF: APT
SKU: MRF557-APT
MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)
In Stock
Designed primarily for wideband large signal stages in the VHF frequency range.
- Specified @ 12.5 V, 175 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11.5 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Package
- Electroless Tin Plated Leads for Improved Solderability
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
MFR: MRF553-MSC
MRF545 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon PNP, high Frequency, high breakdown, Transistor
- Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF545-MSC
MRF545 APT RF and Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon PNP, high Frequency, high breakdown, Transistor
- Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
New Old Stock * No longer available for export
MFR: Advanced Power Technology RF
SKU: MRF545-APT
MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon NPN, high Frequency, high breakdown Transistor
- Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
New Old Stock * No longer available for export
MFR: APT
MRF557 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
In Stock
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
- Low Noise - 2.5 dB @ 500 MHZ
- Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
- Ftau - 5.0 GHz @ 10v, 75mA
- Cost Effective MacroX Package
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF557-MSC