Transistors - RF, Mosfets, Misc.
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MRF313 M/A-COM NPN Silicon High-Frequency Transistor 1.0W 400MHz 28V (NOS)
In Stock
Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.
- Specified 28 V, 400 MHz characteristics — Output power = 1.0 W, Power gain = 15 dB min., Efficiency = 45% typ.
- Emitter ballast and low current density for improved MTBF
- Common emitter for improved stability
New Old Stock * No longer available for export
MRF: M/A-COM
SKU: MRF313-MA
MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V
In Stock
Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
MRF: M/A-COM
SKU: MRF314-MA
MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V Matched Pair (2)
In Stock
Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
MRF: MA/COM
SKU: MRF314MP-MA
MRF317 M/A-COM NPN Silicon Power Transistor 100W 30-200MHz 28V
In Stock
Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 100 W, Minimum gain = 9.0 dB
- Built–in matching network for broadband operation
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- High output saturation power — ideally suited for 30 W carrier/120 W
- Peak AM amplifier service
- Guaranteed performance in broadband test fixture
MFR: M/A-COM
SKU: MRF317-MA
MRF321 M/A-COM NPN Silicon Power Transistor 10W 400MHz 28V (NOS)
In Stock
Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc; Output power = 10 W, Power gain = 12 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF321-MA
MRF323 M/A-COM Transistor 20 watt 28v 400 MHz
In Stock
Made with original Motorola Die
- Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input impedance
MFR: M/A-COM
SKU: MRF323-MA
MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V
In Stock
Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.
- Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
- Built–in matching network for broadband operation using double match technique
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability applications
- Characterized for 100 =8 500 MHz
MRF: M/A-COM
SKU: MRF327-MA
MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V
In Stock
Made with original Motorola Die
Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.
- Specified 28 V, 400 MHz characteristics — Output power = 125 W, Typical gain = 10 dB, Efficiency = 55% (typ.)
- Built–in input impedance matching networks for broadband operation
- Push–pull configuration reduces even numbered harmonics
- Gold metallization system for high reliability
- 100% tested for load mismatch
MRF: M/A-COM
SKU: MRF392-MA