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RFM04U6P Toshiba Transistor 4.3 watt 13.3dB Surface Mount (NOS)

In Stock

$1.91

Transistor 4.3 watt 13.3dB Surface Mount
New Old Stock * No longer available for export
MFR: Toshiba
SKU: RFM04U6P

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Details

RFM04U6P Toshiba Transistor FET, Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

  • Output power: PO = 4.3W (typ)
  • Gain: G= 13.3dB (typ)
  • Drain efficiency: η= 70% (typ)

New Old Stock * No longer available for export
MFR: Toshiba

See Data Sheet for more information

 

Additional Information

Featured Product No
Made in the USA No
GTIN No
ISBN No
NATO Stock Number No
Manufacturer Part Number No
Manufacturer Toshiba
Condition New
NOS Yes
Call For Price No
Manufacturer Name TOSHIBA AMERICA ELECTRONICS COMPONENTS

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