BF980 Philips Silicon N-Channel Dual Gate MOS-FET Transistor (NOS)
In Stock
$2.91
Depletion type field-effect trnasistor in a plastic X-package. Intended for UHF applications with 12v Supply voltage.
- Drain Source Voltage (MAX): 18v
- Drain Current (MAX): 30mA
- Total Power disipation (MAX): 225mW
New Old Stock * No longer available for export
MFR: Philips Electronics
SKU: BF980
Details
BF980 Philips Silicon N-Channel Dual Gate MOS-FET Transistor (NOS)
Depletion type field-effect trnasistor in a plastic X-package. Intended for UHF applications with 12v Supply voltage.
- Drain Source Voltage (MAX): 18v
- Drain Current (MAX): 30mA
- Total Power disipation (MAX): 225mW
New Old Stock * No longer available for export
MFR: Philips Electronics
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | No |
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