2SK210GR Toshiba Field Effect Transistor, Silicon N Channel Junction Type
In Stock
$2.91
Field Effect Transistor, Silicon N Channel Junction Type
MFR: Toshiba
SKU: 2SK210GR
Details
2SK210GR Toshiba Field Effect Transistor, Silicon N Channel Junction Type
- FM Tuner Applications
- VHF Band Amplifier Application
- High power gain: GPS= 24dB (typ.) (f = 100 MHz)
-
Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
-
High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Note: IDSS classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA
MFR: Toshiba
(NOS), Not available for Export
See Data Sheet for additional specifications
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | SHOYO CORP |
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