2N3906 Toshiba PNP Silicon Transistor (NOS)
In Stock
$0.91
- Collector-Emitter Saturation Voltage: 400 mV
- Maximum DC Collector Current: 200 mA
- Pd - Power Dissipation: 625 mW
- Gain Bandwidth Product fT: 250 MHz
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2N3906
Details
2N3906 Toshiba PNP Silicon Transistor (NOS)
- Transistor Polarity: PNP
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 40 V
- Collector- Base Voltage VCBO: 40 V
- Emitter- Base Voltage VEBO: 5 V
- Collector-Emitter Saturation Voltage: 400 mV
- Maximum DC Collector Current: 200 mA
- Pd - Power Dissipation: 625 mW
- Gain Bandwidth Product fT: 250 MHz
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 150 C
- Packaging: Ammo Pack
- DC Current Gain hFE Max: 100
New Old Stock * No longer available for export
MFR: Toshiba
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | No |
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