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MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

In Stock

$118.91

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.


• Enhanced thermal performance
• Higher power dissipation  Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%  Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability


MFR: M/A-COM
SKU: MRF151A-MA

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Details

MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

• Enhanced thermal performance
• Higher power dissipation  Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%  Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

MFR: M/A-COM

Additional Information

Featured Product No
Made in the USA No
GTIN N/A
ISBN N/A
NATO Stock Number N/A
Manufacturer Part Number N/A
Manufacturer No
Condition New
NOS No
Call For Price No
Manufacturer Name FIRST SOURCE INC.

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