BF966S Vishay N Channel Dual Gate MOS - Field Effect Triode Depletion Mode Transistor (NOS)
In Stock
$1.91
- EU RoHS: Compliant
- Configuration: Single Dual Gate
- Channel Type: N
New Old Stock * No longer available for export
MFR: Vishay
SKU: BF966S
Details
BF966S Vishay N Channel Dual Gate MOS - Field Effect Triode Depletion Mode Transistor (NOS)
- EU RoHS: Compliant
- ECCN (US): EAR99
- Part Status: Obsolete
- HTS: 8541.21.00.95
- Configuration: Single Dual Gate
- Channel Mode: Depletion
- Channel Type: N
- Number of Elements per Chip: 1
- Maximum Drain Source Voltage (V): 20
- Maximum Gate Source Voltage (V): ±8
- Maximum Continuous Drain Current (A): 0.03
- Typical Input Capacitance @ Vds (pF): 2.2@15V @ Gate 1|1.1@15V @ Gate 2
- Typical Reverse Transfer Capacitance @ Vds (pF): 0.025 @ 15V
- Typical Output Capacitance @ Vds (pF): 0.8 @ 15V
- Typical Forward Transconductance (S): 0.0185
- Maximum Power Dissipation (mW): 200
- Typical Power Gain (dB): 25
- Minimum Operating Temperature (°C): -55
- Maximum Operating Temperature (°C): 150
- Mounting: Surface Mount
- PCB changed: 4
- Supplier Package: TO-50
- Pin Count: 4
New Old Stock * No longer available for export
MFR: Vishay
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Vishay |
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