2N2369 National Semiconductor High Speed Switching Transistor (NOS)
In Stock
$0.90
- Maximum Collector Power Dissipation (Pc): 0.36 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
New Old Stock
MFR: National Semiconductor
SKU: 2N2369
Details
2N2369 National Semiconductor High Speed Switching Transistor (NOS)
- Maximum Collector Power Dissipation (Pc): 0.36 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 15 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 0.2 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 500 MHz
- Collector Capacitance (Cc): 4 pF
- Forward Current Transfer Ratio (hFE), MIN: 40
New Old Stock
MFR: National Semiconductor
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | National Semiconductor |
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